 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BDX33B/D Darlington Complementary Silicon Power Transistors . . . designed for general purpose and low speed switching applications. * High DC Current Gain -- hFE = 2500 (typ.) at IC = 4.0 * Collector-Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.) -- BDX33B, 34B VCEO(sus) = 100 Vdc (min.) -- BDX33C, 34C * Low Collector-Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc -- BDX33B, 33C/34B, 34C * Monolithic Construction with Build-In Base-Emitter Shunt resistors * TO-220AB Compact Package MAXIMUM RATINGS BDX33B BDX33C* BDX34B * BDX34C *Motorola Preferred Device NPN PNP PD, POWER DISSIPATION (WATTS) IIIIIIIIIIIIIIIIIIIIIII I I I II I I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II I II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIII II IIIIIIIIIIIIIIIIIIIIIII IIII II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII Rating Symbol VCEO VCB VEB IC IB BDX33B BDX34B 80 80 BDX33C BDX34C 100 100 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage 5.0 10 15 Collector Current -- Continuous Peak Base Current 0.25 Total Device Dissipation @ TC = 25_C Derate above 25_C PD 70 0.56 Watts W/_C Operating and Storage Junction Temperature Range TJ, Tstg - 65 to + 150 DARLINGTON 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80 - 100 VOLTS 70 WATTS _C THERMAL CHARACTERISTICS Characteristic CASE 221A-06 TO-220AB Symbol RJC Max Unit Thermal Resistance, Junction to Case 1.78 _C/W 80 60 40 20 0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (C) 140 160 Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. REV 7 (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII BDX33B BDX33C BDX34B BDX34C 1 Pulse Test: Pulse Width 300 s, Duty Cycle 2 Pulse Test non repetitive: Pulse Width = 0.25 s. ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) ON CHARACTERISTICS DC Current Gain1 (IC = 3.0 Adc, VCE = 3.0 Vdc) OFF CHARACTERISTICS Diode Forward Voltage (IC = 8.0 Adc) Base-Emitter On Voltage (IC = 3.0 Adc, VCE = 3.0 Vdc) Collector-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 6.0 mAdc) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCB = rated VCBO, IE = 0) Collector Cutoff Current (VCE = 1/2 rated VCEO, IB = 0) Collector-Emitter Sustaining Voltage1 (IC = 100 mAdc, IB = 0, VBE = 1.5 Vdc) Collector-Emitter Sustaining Voltage1 (IC = 100 mAdc, IB = 0, RBE = 100) Collector-Emitter Sustaining Voltage1 (IC = 100 mAdc, IB = 0) 2 v Characteristic v 2.0%. BDX33B/BDX34B BDX33C/BDX34C BDX33B/BDX34B BDX33C/BDX34C TC = 25_C TC = 100_C BDX33B, 33C/34B, 34C TC = 25_C TC = 100_C BDX33B/BDX34B BDX33C/BDX33C BDX33B, 33C/34B, 34C BDX33B, 33C/34B, 34C Motorola Bipolar Power Transistor Device Data VCEO(sus) VCER(sus) VCEX(sus) VCE(sat) VBE(on) Symbol ICBO ICEO IEBO hFE VF Min 80 100 80 100 80 100 750 -- -- -- -- -- -- -- -- Max 4.0 2.5 2.5 1.0 5.0 0.5 10 10 -- -- -- -- -- -- -- mAdc mAdc mAdc Unit Vdc Vdc Vdc Vdc Vdc Vdc -- BDX33B BDX33C BDX34B BDX34C r(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.01 0.05 0.02 t1 SINGLE PULSE t2 SINGLE PULSE P(pk) RJC(t) = r(t) RJC RJC = 1.92C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 50 100 200 300 500 1000 D = 0.5 0.2 DUTY CYCLE, D = t1/t2 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 30 Figure 1. Thermal Response 20 10 IC, COLLECTOR CURRENT (AMP) 5.0 2.0 1.0 0.5 0.2 0.1 BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO BDX34B BDX34C 2.0 3.0 5.0 7.0 10 20 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 TC = 25C 5.0 ms 1.0 ms dc 500 s 100 s IC, COLLECTOR CURRENT (AMP) 20 10 5.0 2.0 1.0 0.5 0.2 0.1 TC = 25C 5.0 ms 1.0 ms dc 500 s 100 s BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO BDX33B BDX33C 2.0 3.0 5.0 7.0 10 20 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 0.05 0.05 0.02 1.0 0.02 1.0 Figure 2. Active-Region Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Fig. 3 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) = 150_C. TJ(pk) may be calculated from the data in Fig. . At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 10,000 hFE, SMALL-SIGNAL CURRENT GAIN 5000 3000 2000 1000 500 300 200 100 50 30 20 10 1.0 2.0 PNP NPN 5.0 10 20 50 100 f, FREQUENCY (kHz) 200 500 1000 TJ = 25C VCE = 4.0 Vdc IC = 3.0 Adc 300 TJ = 25C 200 C, CAPACITANCE (pF) 100 70 50 PNP NPN 0.2 Cib Cob 30 0.1 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 3. Small-Signal Current Gain Figure 4. Capacitance Motorola Bipolar Power Transistor Device Data 3 BDX33B BDX33C BDX34B BDX34C NPN BDX33B, 33C 20,000 VCE = 4.0 V 10,000 hFE, DC CURRENT GAIN 5000 3000 2000 1000 - 55C 500 300 200 TJ = 150C 10,000 hFE, DC CURRENT GAIN 5000 3000 2000 1000 500 300 200 - 55C 25C TJ = 150C 20,000 VCE = 4.0 V PNP BDX34B, 34C 25C 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 Figure 5. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 3.0 TJ = 25C 2.6 IC = 2.0 A 2.2 4.0 A 6.0 A VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 3.0 TJ = 25C 2.6 IC = 2.0 A 2.2 4.0 A 6.0 A 1.8 1.8 1.4 1.4 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IB, BASE CURRENT (mA) 10 20 30 Figure 6. Collector Saturation Region 3.0 TJ = 25C V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.5 3.0 TJ = 25C 2.5 2.0 VBE(sat) @ IC/IB = 250 VBE @ VCE = 4.0 V VCE(sat) @ IC/IB = 250 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 2.0 1.5 1.5 VBE @ VCE = 4.0 V VBE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 1.0 1.0 0.5 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 7. "On" Voltages 4 Motorola Bipolar Power Transistor Device Data BDX33B BDX33C BDX34B BDX34C PACKAGE DIMENSIONS -T- B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 Q 123 A U K H Z L V G D N R J STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR CASE 221A-06 TO-220AB ISSUE Y Motorola Bipolar Power Transistor Device Data 5 BDX33B BDX33C BDX34B BDX34C Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Bipolar Power Transistor Device Data *BDX33B/D* BDX33B/D |
Price & Availability of BDX33B
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |